2N7002DW L6327

Description：MOSFET 2N-CH 60V 0.3A SOT363
Series：OptiMOS™

SKU:cb5cf9b8cc28 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.3A SOT363
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：300mA
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：20pF @ 25V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VSSOP, SC-88, SOT-363
Supplier Device Package：PG-SOT363-PO
Grade：-
Qualification：-

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2N7002DW L6327

Overview

The Infineon Technologies 2N7002DW L6327 is a dual N-channel enhancement mode MOSFET housed in an SOT-363-6 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 300 mA per channel. The device exhibits a maximum on-resistance of 1.6 Ohms at 10 V gate drive, with a typical gate charge of 600 pC. Operating temperatures range from -55 °C to +150 °C, and the component holds AEC-Q100 qualification for automotive reliability.

Feature Summary

Dual configuration integrating two independent N-channel MOSFETs within a compact SOT-363-6 footprint
Automotive-grade reliability certified under the AEC-Q100 standard for harsh environment operation
Enhancement mode switching capability optimized for low-voltage signal control applications

Applications

Automotive electronic systems requiring qualified small-signal switching components
General-purpose logic level translation circuits
Low-power load switching and driver interfaces

Procurement Notes

Verify the specific suffix L6327 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT-363-6 package. Confirm that the AEC-Q100 qualification meets project requirements if operating in automotive environments. Cross-reference part numbers to distinguish between single and dual variants within the 2N7002 family.

Selection Notes

Select this component when a dual N-channel configuration is required in a minimal surface-mount area. The 60 V rating suits low-voltage digital logic interfacing. Consider the 1.6 Ohm on-resistance for power dissipation limits in continuous duty cycles. Verify thermal management needs given the 500 mW total power dissipation capability in the specified package.

Part Context

This part belongs to the 2N7002 series of small-signal MOSFETs manufactured by Infineon Technologies. While the base 2N7002 designation typically refers to a single-channel device in an SOT-23 package, the DW suffix indicates a dual-channel variant in an SOT-363 package. This series provides cost-effective solutions for general-purpose switching tasks.