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The MCC 2N7002DW-TP is a dual N-channel enhancement mode MOSFET housed in an SOT-363-6 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 300 mA per channel. The device exhibits a maximum on-resistance of 13.5 Ohms at a gate-source voltage of 10 V, with a threshold voltage typically around 1 V. Power dissipation is rated at 150 mW, supporting an operating temperature range from -55°C to +150°C.
Verify the specific suffix TP against the manufacturer's official documentation to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the SOT-363 footprint matches the target PCB layout. Cross-reference the electrical parameters with the latest datasheet revision to account for any manufacturing updates or parameter tolerances that may affect circuit performance.
Select this component when a dual-channel solution is required to save board space compared to discrete single MOSFETs. The 60V rating provides adequate headroom for 5V and 12V systems. Consider the 13.5 Ohm on-resistance limit for power loss calculations in high-current paths. Verify thermal management requirements given the 150 mW power dissipation limit in the small SOT-363 package.
This part belongs to the Micro Commercial Components (MCC) 2N7002 series, which adapts the standard 2N7002 specification into a dual-channel format. While the classic 2N7002 is a single N-channel device often found in SOT-23 packages, the DW variant integrates two such channels in an SOT-363 housing. This allows designers to replace multiple discrete components with a single surface-mount device, simplifying assembly and reducing overall system footprint.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official manufacturer cross-reference guides for verified alternatives.