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The 2N7002DWK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT363 package. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device provides a maximum continuous drain current (ID) of 261mA at +25°C, with a pulsed drain current (IDM) capability of 1.1A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 3.0Ω at VGS = 10V and ID = 200mA, or 4.0Ω at VGS = 4.5V and ID = 150mA. Total power dissipation (PD) reaches 0.33W under standard conditions. Operating and storage temperature ranges span from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel carrier format required for your assembly line. Confirm that the component meets all applicable automotive quality standards if utilized in regulated environments. Cross-reference the date code markings against current production batches to ensure material traceability and compliance with recent environmental regulations.
Select this component when space-constrained designs require two independent N-channel switches in a single footprint. Evaluate the RDS(ON) specifications against your load requirements at the intended gate drive voltage. Ensure the thermal resistance characteristics align with your board layout's copper area and ambient operating conditions to prevent junction overheating during continuous operation.
This part belongs to the 2N7002 family of small signal MOSFETs produced by Diodes Incorporated. While sharing the base '2N7002' designation with other manufacturers, the 'DWK' suffix specifically identifies the dual-channel variant housed in the SOT363 package. This distinguishes it from single-channel equivalents like the 2N7002K-7, which utilizes a different physical form factor.
Publicly confirmed substitute part numbers are not available in the provided documentation.