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The Diodes Incorporated 2N7002DWQ-13-F is a dual N-channel enhancement mode MOSFET designed for automotive applications. It is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. The device features a maximum drain-source voltage of 60V, a continuous drain current of 0.23A at +25°C, and a maximum on-resistance of 7.5Ω at VGS = 5V. It operates within a temperature range of -55°C to +150°C and utilizes an SOT363 package.
Verify the specific ordering suffix '-13-F' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets the required automotive change control standards and PPAP capabilities as specified by the manufacturer's quality definitions.
Select this component when a dual N-channel MOSFET with AEC-Q101 qualification is required. Ensure the design accommodates the 60V drain-source voltage limit and the 0.23A continuous current rating under the expected thermal conditions.
This part belongs to the 2N7002DWQ series from Diodes Incorporated. It is specifically engineered for high-reliability environments, distinguishing itself through its automotive-grade certification and compliance with strict manufacturing standards.
Consult official substitution lists for verified alternatives. Generic replacements may lack the necessary AEC-Q101 qualification or IATF 16949 manufacturing pedigree required for automotive integration.
Yes, it is AEC-Q101 qualified, supported by a PPAP, and manufactured in IATF 16949 certified facilities.
The maximum continuous drain current is 0.23A at an ambient temperature of +25°C.
Yes, it is totally lead-free, fully RoHS compliant, and halogen- and antimony-free.