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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT23-3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Panasonic 2N7002E is a silicon N-channel MOSFET housed in an SOT-23 (TO-236AA) package. It features a drain-source voltage of 60 V and a continuous drain current of 300 mA at 25°C. The device exhibits a typical on-state resistance of 1 Ω at VGS = 4.5 V, with a gate-source threshold voltage of 2 V at ID = 250 µA. Total power dissipation is rated at 350 mW, and the operating junction temperature range extends from -55°C to +150°C.
Feature Summary
- Low Drain-source On-state Resistance
- Halogen-free and RoHS compliant construction
Applications
- Switching circuits
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance with EU RoHS directives and UL-94 V-0 standards. Ensure storage conditions adhere to specified limits to maintain device integrity prior to assembly.
Selection Notes
Select this component for applications requiring low on-state resistance and fast switching capabilities within a compact surface-mount footprint. Evaluate thermal management requirements based on the 350 mW power dissipation rating and ensure circuit voltages remain within the 60 V breakdown limit.
Part Context
This part belongs to the Panasonic MOS FET product line, specifically designed as a small signal transistor. It utilizes a Silicon N-channel enhancement mode structure optimized for general-purpose switching tasks in consumer electronics and industrial control equipment.
Replacement Considerations
Cross-reference with other manufacturers offering identical pinouts and electrical characteristics. Verify that alternative components meet the same 60 V drain-source voltage and 300 mA continuous current ratings.
