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Product Detailed Parameters
- Description：MOSFET N-CH 60V 240MA SOT23-3
- Series：-
- Mfr：Vishay Siliconix
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：21 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Vishay Siliconix 2N7002E is an N-channel enhancement mode MOSFET housed in a TO-236 (SOT-23) package. It features a drain-source voltage rating of 60 V and a continuous drain current of 240 mA at 25 °C. The device exhibits a maximum on-resistance of 3 Ω at VGS = 10 V and ID = 250 mA, with a typical gate threshold voltage of 2.5 V. Maximum power dissipation is rated at 0.35 W at 25 °C ambient temperature.
Feature Summary
- Halogen-free construction compliant with IEC 61249-2-21 definition
- Low input capacitance for fast switching speed
- Logic-level operation capability without buffer amplifiers
- Compliant to RoHS Directive 2002/95/EC
Applications
- Direct logic-level interface with TTL or CMOS circuits
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
- Battery operated systems
- Solid-state relays
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number 2N7002E may be supplied with different packaging or environmental compliance markings depending on the suffix. Confirm that the received component matches the required lead-free and halogen-free specifications if mandated by the design. Cross-reference the manufacturer's official documentation for the exact configuration associated with the ordered variant.
Selection Notes
Select this component for low-voltage switching applications requiring direct drive from standard logic families. The low threshold voltage facilitates efficient control using 3.3 V or 5 V logic signals. Ensure the thermal environment supports the specified junction-to-ambient resistance. Validate that the load current remains within the continuous drain current limits under operating conditions.
Part Context
This component belongs to the 2N7002E series manufactured by Vishay Siliconix. It utilizes silicon technology and is designed as a general-purpose N-channel MOSFET. The device is intended for surface-mount assembly in compact electronic designs where space constraints and low power consumption are critical factors.
Replacement Considerations
The datasheet lists 2N7002E-T1-E3 and 2N7002E-T1-GE3 as ordering variants. These suffixes denote specific packaging and environmental attributes rather than functional differences. Verify compatibility before substituting.
