ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The 2N7002E-7-F is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 300 mA. Key electrical characteristics include a maximum on-resistance of 3 Ohms at a gate-source voltage of 10 V, with a typical gate charge of 223 pC. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 540 mW.
Feature Summary
- Single N-channel enhancement mode vertical DMOS FET construction
- Surface-mount design in a compact three-terminal SOT-23 package
- High voltage capability with 60 V drain-source breakdown
- Low input capacitance suitable for general switching applications
Applications
- Battery protection circuits
- Power management systems
- Load switches
- Motor control interfaces
Procurement Notes
Verify the manufacturer marking code '702G' against official Diodes Incorporated documentation to confirm authenticity. Ensure the component matches the specified SOT-23-3 footprint and pinout configuration. Cross-reference the datasheet revision history to validate the electrical parameters provided in this summary.
Selection Notes
Select this component when a standard N-channel MOSFET with 60 V rating and low on-resistance is required. The SOT-23-3 package offers space efficiency for portable electronics. Consider the 300 mA current limit and thermal constraints during circuit design. Verify compatibility with logic-level drive voltages if used as a load switch.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same core die and electrical specifications as the base 2N7002 model but includes specific ordering suffixes indicating packaging and tape-and-reel configurations. The 'E' variant typically denotes specific manufacturing lot or testing criteria defined by the manufacturer.
Replacement Considerations
Direct substitutes include the 2N7002K-7-F from the same manufacturer. Other compatible parts within the family are the 2N7002H-7 and 2N7002W-7-F, though these may differ in package type or specific Rds(on) values.
