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The Formosa MS 2N7002E-Q1-H is a 60V N-channel enhancement mode MOSFET in an SOT-23 package, qualified to AEC-Q101 standards. It features low on-resistance and ESD protection up to 2kV HBM. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 417mA at 25°C, and a typical RDS(on) of 1.5Ω at VGS=10V and ID=0.5A. The device supports a junction temperature range of -55°C to +150°C.
Verify the specific suffix '-H' confirms halogen-free status when ordering. Confirm that the 'E-Q1' designation aligns with required AEC-Q101 automotive qualification levels. Ensure the SOT-23 package matches the PCB footprint design. Check datasheet revision history for any updates to thermal or electrical limits before finalizing designs.
Select this component for applications requiring automotive-grade reliability in small surface-mount packages. The 60V rating suits low-voltage systems. Consider the 417mA continuous current limit for load capacity. Verify gate threshold voltage compatibility with the driving logic levels. Evaluate thermal performance based on the specified junction-to-ambient resistance.
This part belongs to the 2N7002 family of N-channel MOSFETs manufactured by Formosa Microsemi. It is specifically engineered for high-reliability environments, distinguishing itself through AEC-Q101 certification. The SOT-23 package provides a compact solution for space-constrained portable and automotive electronics.
Check for equivalent parts with matching AEC-Q101 qualification if supply is limited. Verify pinout compatibility (Gate, Source, Drain) with existing layouts. Ensure replacement devices meet the same 60V breakdown and current handling requirements.
The device offers ESD protection up to 2kV using the Human Body Model (HBM) method.
Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.