2N7002E,215

2N7002E,215

$0.22
  • Description:MOSFET N-CH 60V 385MA TO236AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:19abbfdb8899 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 385MA TO236AB
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:385mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.69 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):830mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-236AB
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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2N7002E,215

Overview

The Nexperia 2N7002E,215 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT-23 (TO-236AB) surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 385 mA at 25 °C. The device exhibits a maximum on-state resistance of 3 Ω at VGS=10V and ID=500mA. Total power dissipation is rated at 0.83 W. Operating junction temperature ranges from -65 °C to +150 °C.

Feature Summary

  • Logic level threshold compatible for direct interface with standard logic families
  • Very fast switching performance enabled by TrenchMOS technology
  • Surface-mounted plastic package suitable for automated assembly

Applications

  • Logic level translator
  • High-speed line driver
  • Switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for low-voltage switching applications requiring compact footprint. Ensure gate drive voltages remain within the ±30 V absolute maximum rating. Consider thermal derating curves when operating near the 150 °C junction limit or in high ambient temperatures.

Part Context

This part belongs to the 2N7002 family of N-channel MOSFETs manufactured by Nexperia. It represents the evolution of the classic 2N7002 discrete transistor, adapted for modern surface-mount manufacturing processes while maintaining compatibility with legacy through-hole designs.

Replacement Considerations

NX7002BKR

2N7002E,2152N7002E,215
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