SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia 2N7002E,215 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT-23 (TO-236AB) surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 385 mA at 25 °C. The device exhibits a maximum on-state resistance of 3 Ω at VGS=10V and ID=500mA. Total power dissipation is rated at 0.83 W. Operating junction temperature ranges from -65 °C to +150 °C.
Verify the specific ordering suffix
Select this component for low-voltage switching applications requiring compact footprint. Ensure gate drive voltages remain within the ±30 V absolute maximum rating. Consider thermal derating curves when operating near the 150 °C junction limit or in high ambient temperatures.
This part belongs to the 2N7002 family of N-channel MOSFETs manufactured by Nexperia. It represents the evolution of the classic 2N7002 discrete transistor, adapted for modern surface-mount manufacturing processes while maintaining compatibility with legacy through-hole designs.
NX7002BKR