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Product Detailed Parameters
- Description：MOSFET N-CH 60V 170MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：26 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2N7002H-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 210mA at +25°C. The device exhibits a maximum static drain-source on-resistance of 7.5Ω at VGS = 5V. Total gate charge is 352pC at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C and utilizes a SOT-23 surface mount package.
Feature Summary
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
- Qualified to JEDEC standards for high reliability
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental specifications, including compliance with EU Directive 2002/95/EC (RoHS) and 2015/863/EU (RoHS 3). Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance and fast switching speed is required. The 2N7002H-13 variant specifically provides bulk packaging suitable for automated assembly processes requiring higher volume quantities. Consider the thermal resistance characteristics and power dissipation limits relative to the intended PCB layout and ambient operating conditions.
Part Context
This part belongs to the 2N7002H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The 'H' designation indicates specific electrical characteristics optimized for high-efficiency applications compared to standard variants.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes qualified to AEC-Q101. Verify pinout compatibility and electrical parameter alignment before substituting with other manufacturers' equivalents.
