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Product Detailed Parameters
- Description：MOSFET N-CH 60V 170MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：26 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2N7002H-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 210mA at +25°C on high copper coverage PCBs. The device exhibits a maximum static drain-source on-resistance of 7.5Ω at VGS = 5V. Total gate charge is specified at 352pC, with turn-on rise time at 2.9ns and turn-off fall time at 4.7ns. Power dissipation reaches 510mW under the same conditions. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed capabilities
- Totally lead-free and fully RoHS compliant
- Qualified to JEDEC standards for high reliability
Applications
- Motor control circuits
- Power management functions
- High-efficiency power applications
Procurement Notes
Verify component authenticity through authorized channels. Confirm package type matches SOT-23 specifications. Ensure compliance with RoHS directives if required. Check datasheet revisions for potential parameter updates. Validate thermal performance requirements against specific PCB layout constraints before finalizing procurement decisions.
Selection Notes
Evaluate thermal resistance values based on intended PCB copper coverage. Compare gate threshold voltage requirements against driving logic levels. Assess switching speed needs against circuit frequency demands. Verify power dissipation limits relative to ambient operating temperatures. Consider packaging options for automated assembly processes.
Part Context
This component belongs to the 2N7002H series of N-channel MOSFETs designed for surface mount applications. It utilizes a standard SOT-23 case configuration suitable for compact electronic designs. The product line emphasizes low on-state resistance while maintaining superior switching performance characteristics for modern power management solutions.
Replacement Considerations
For automotive applications requiring specific change control, refer to related automotive grade parts with Q-suffixes qualified to AEC-Q101 standards.
