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Product Detailed Parameters
- Description：2N7002HW/SOT323/SC-70
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：34 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：310mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Nexperia 2N7002HW is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT323 (SC-70) surface-mounted device plastic package with three leads. The component supports a drain-source voltage of 60 V and a continuous drain current of 310 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.6 Ω at VGS = 10 V, a gate-source voltage range of ±20 V, and a total power dissipation capacity of 260 mW at 25 °C ambient temperature.
Feature Summary
- Logic-level compatible for direct interfacing with standard logic circuits
- Very fast switching performance enabled by Trench MOSFET technology
- Qualified to AEC-Q101 automotive standards for reliability
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and reel specifications. Confirm that the requested part number matches the required AEC-Q101 qualification status if automotive compliance is mandatory for the design. Ensure the procurement channel provides valid traceability data consistent with Nexperia's product specifications.
Selection Notes
Select this component when a small form factor is required alongside high switching speeds. The low on-state resistance and logic-level compatibility make it suitable for battery-powered applications where efficiency is critical. Verify that the thermal constraints of the target PCB footprint can support the specified power dissipation limits under operating conditions.
Part Context
This device belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia USA Inc. It represents a specialized variant optimized for the SC-70 (SOT323) package, distinguishing it from other series members available in different packages such as SOT-23 or dual configurations. The product utilizes advanced trench technology to achieve superior performance characteristics within a minimal physical footprint.
Replacement Considerations
Consult official Nexperia cross-reference documents for verified substitutes. Potential alternatives may include other 60V N-channel MOSFETs in the SOT323 package, but functional equivalence must be validated against specific pinout and electrical parameter requirements.
