2N7002K-7

$0.14

Description：MOSFET N-CH 60V 380MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c532f17cf047 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K-7

Overview

The 2N7002K-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 380mA at +25°C with VGS=10V. The device offers a maximum on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation is rated at 370mW in steady state, with a junction-to-ambient thermal resistance of 357°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
Provides fast switching speed and low input/output leakage characteristics.
Includes internal gate protection diode offering ESD protection up to 2kV.
Qualified to JEDEC standards for high reliability and fully RoHS compliant.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard SOT23 package with a packing quantity of 3,000 units per tape and reel. Confirm that the component meets the required environmental specifications, including being halogen-free, antimony-free, and lead-free. Ensure the application design accounts for the specified thermal resistance values when mounted on FR-4 PCBs.

Selection Notes

Select this component for designs requiring an N-channel enhancement mode MOSFET with a 60V breakdown voltage. Consider the 380mA continuous drain current capability at +25°C for load requirements. Evaluate the 2Ω on-resistance at 10V gate drive against system efficiency targets. Verify compatibility with the SOT23-3 footprint and ensure the operating temperature range fits the environmental constraints.

Part Context

This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a standard SOT23 surface-mount package. The product is designed to balance low on-state resistance with superior switching performance. An automotive-compliant variant, designated as 2N7002KQ, is available under a separate datasheet for specialized high-reliability applications.

Replacement Considerations

An automotive-compliant substitute is available under the part number 2N7002KQ. Verify pinout compatibility and electrical parameter alignment before substitution.