2N7002K-T1-E3

$0.24

Description：MOSFET N-CH 60V 300MA SOT23-3
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5bb4816076d2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 300MA SOT23-3
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K-T1-E3

Overview

The Vishay Siliconix 2N7002K-T1-E3 is a lead-free N-channel enhancement mode MOSFET housed in a SOT-23 package. It features a drain-source voltage of 60 V and a continuous drain current of 0.3 A at 25 °C. The maximum drain-source on-resistance is 2 Ω at VGS = 10 V, with a gate threshold voltage ranging from 1 V to 2.5 V at ID = 250 μA. Total gate charge is typically 0.4 nC. Power dissipation reaches 0.35 W at 25 °C, and the operating junction temperature range spans -55 °C to +150 °C.

Feature Summary

Utilizes TrenchFET power MOSFET technology for low on-resistance and fast switching speed.
Provides 2000 V ESD protection and low input/output leakage currents.
Features a low gate threshold voltage suitable for direct logic-level interface without buffer amplifiers.

Applications

Direct logic-level interface circuits for TTL and CMOS systems
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Battery operated systems requiring low voltage operation
Solid state relay implementations

Procurement Notes

Verify that the specific order contains the suffix -E3 to confirm lead-free terminations compliant with RoHS standards. Confirm the package designation matches the required SOT-23 footprint. Ensure the component marking code reads '7K' to validate authenticity against the official Vishay datasheet specifications.

Selection Notes

Select this component when a single N-channel MOSFET with a 60 V breakdown voltage and 0.3 A continuous current rating is required. It is appropriate for applications needing low offset voltage and high-speed circuit performance. Verify that the 2 Ω on-resistance meets the thermal and efficiency requirements of the target load under the intended gate drive conditions.

Part Context

This part belongs to the 2N7002K series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the SOT-23 (TO-236) surface-mount package configuration. The device is an enhancement mode field-effect transistor designed for general-purpose switching applications within the discrete semiconductor transistor category.

Replacement Considerations

Cross-reference with other manufacturers offering equivalent 60 V, 0.3 A N-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and ensure replacement parts meet or exceed the 2 Ω RDS(on) specification at the required gate drive voltage.