2N7002K-T1-GE3

$0.23

Description：MOSFET N-CH 60V 300MA TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:099bd92a9922 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 300MA TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K-T1-GE3

Overview

The Vishay Siliconix 2N7002K-T1-GE3 is a lead-free and halogen-free N-channel enhancement mode MOSFET housed in an SOT-23 (TO-236) surface-mount package. It features a maximum drain-source voltage of 60 V, a continuous drain current of 0.3 A, and a low on-resistance of 2 Ω at VGS = 10 V. The device utilizes TrenchFET technology to achieve fast switching speeds with a turn-on time of 25 ns and provides 2000 V ESD protection.

Feature Summary

TrenchFET power MOSFET technology for optimized performance
Low input capacitance and leakage currents
High-speed switching capability
Integrated 2000 V electrostatic discharge protection

Applications

Direct logic-level interface with TTL/CMOS circuits
Drivers for relays, solenoids, lamps, and hammers
Battery-operated systems
Solid state relays

Procurement Notes

Verify the specific suffix 'GE3' confirms the component is both lead-free and halogen-free as per Vishay ordering information. Confirm that the SOT-23 package marking code corresponds to '7K'. Ensure the application environment remains within the specified -55 °C to +150 °C operating junction temperature range to maintain reliability.

Selection Notes

Select this component when a single N-channel MOSFET with a 60 V breakdown voltage is required. It is suitable for applications needing direct drive from standard logic levels without buffer amplification. Consider its 0.3 A continuous current rating and 2 Ω on-resistance for low-power switching tasks where minimal offset voltage is beneficial.

Part Context

This part belongs to the 2N7002K series manufactured by Vishay Siliconix. It represents a modern iteration of the classic 2N7002 family, utilizing advanced TrenchFET technology to improve upon traditional planar designs. The component is designed for general-purpose switching applications requiring high speed and low power consumption.

Replacement Considerations

The 2N7002K-T1-E3 serves as the lead-free equivalent within the same product line. Verify pinout compatibility and thermal characteristics before substituting with other N-channel MOSFETs offering similar 60 V ratings and SOT-23 packaging.