2N7002K

$0.09

Description：60V 300MA 350MW 3.5@10V,300MA 3V
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:04272536e69c Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：60V 300MA 350MW 3.5@10V,300MA 3V
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：18 pF @ 60 V
FET Feature：-
Power Dissipation (Max)：350mW (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K

Overview

The 2N7002K is a single N-channel enhancement mode MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It utilizes Trench Power MV technology and is housed in an SOT-23 surface-mount package. The device supports a maximum drain-source voltage of 60V and a continuous drain current of 0.3A at 25°C. Key electrical characteristics include a gate threshold voltage ranging from 0.8V to 3V, with on-state resistance specified as 3.5Ω max at VGS=10V and 4.5Ω max at VGS=4.5V. The component operates within a junction temperature range up to 150°C.

Feature Summary

Trench Power MV MOSFET technology for enhanced performance
Voltage-controlled small signal switching capability
Low input capacitance and fast switching speed
Low input and output leakage currents

Applications

Battery operated systems
Solid-state relays

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. when sourcing this specific part number. Confirm that the ordering suffix corresponds to the standard SOT-23 packaging configuration. Ensure compatibility with the documented absolute maximum ratings, particularly regarding thermal resistance and power dissipation limits during procurement planning.

Selection Notes

Select this component for low-power switching applications requiring logic-level compatibility. The low gate threshold voltage allows effective control by standard logic signals. Consider the thermal resistance and power dissipation constraints for high-frequency or continuous load scenarios. Verify package dimensions against PCB layout requirements before finalizing the design.

Part Context

This component belongs to the general category of small-signal N-channel MOSFETs designed for low-voltage switching tasks. It serves as a fundamental discrete semiconductor device used in electronic circuits where efficient voltage-controlled switching is required. The SOT-23 package provides a compact footprint suitable for space-constrained printed circuit board designs.

Replacement Considerations

Cross-reference with other manufacturers offering the 2N7002K designation to ensure pinout and electrical parameter compatibility. Verify that alternative sources provide equivalent trench technology specifications and identical SOT-23 mechanical dimensions.