2N7002K_R1_00001

$0.10

Description：SOT-23, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4640eb22f9dd Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：SOT-23, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002K_R1_00001

Overview

The Panjit International Inc. 2N7002K_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET housed in an SOT-23 package. It features a maximum continuous drain current of 300mA and a power dissipation rating of 500mW at 25°C. The device exhibits a maximum on-state resistance of 3Ω at VGS=10V and 4Ω at VGS=4.5V. Electrical characteristics include a gate threshold voltage range of 1V to 2.5V, a forward transconductance minimum of 100mS, and a total gate charge of 0.8nC. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Process Technology for ultra-low on-resistance
High Density Cell Design optimized for low conduction losses
ESD protection rated at 2KV HBM
Very low leakage current in the off condition

Applications

Battery operated systems
Solid-State Relays Drivers
Relay control circuits
Display drivers
Memory modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and marking codes. Confirm RoHS 2.0 compliance and green molding compound specifications match project requirements. Ensure thermal management aligns with the specified derating curve above 25°C ambient temperature.

Selection Notes

Select this component for applications requiring low on-resistance and high switching efficiency in small form factors. Consider the 300mA continuous current limit and 500mW power dissipation when designing thermal solutions. Verify that the gate drive voltage meets the requirements for achieving the specified RDS(on) performance levels.

Part Context

This part belongs to the 2N7002K series of N-Channel Enhancement Mode MOSFETs manufactured by Panjit International Inc. The series utilizes advanced trench process technology to achieve low on-resistance and high density cell design. The component is designed for general-purpose switching applications in consumer electronics and battery-powered devices.

Replacement Considerations

Cross-reference with other 60V N-Channel MOSFETs in SOT-23 packages. Verify pinout compatibility and electrical parameters such as RDS(on), ID, and VGS(th). Ensure replacement parts meet the same ESD protection and thermal performance standards.