2N7002KDW-AU_R1_000A1

$0.14

Description：MOSFET 2N-CH 60V 0.25A SOT363
Series：-

SKU:bc19dc3a0197 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.25A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：35pF @ 25V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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2N7002KDW-AU_R1_000A1

Overview

The Panjit International Inc. 2N7002KDW-AU is a 60V N-Channel Enhancement Mode MOSFET housed in an SOT-363 package. It features an integrated ESD protection structure rated at 2kV HBM and holds AEC-Q101 qualification for automotive reliability. The device utilizes advanced trench process technology to achieve low on-resistance, specified as less than 3Ω at VGS=10V and ID=500mA, or less than 4Ω at VGS=4.5V and ID=200mA. Key electrical parameters include a continuous drain current of 250mA, a maximum power dissipation of 350mW at 25°C ambient temperature, and a junction-to-ambient thermal resistance of 357°C/W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

ESD protected with 2kV Human Body Model rating
AEC-Q101 qualified for automotive applications
Advanced Trench Process Technology for ultra-low on-resistance
High density cell design for optimized performance

Applications

Battery operated systems
Solid-state relay drivers
Relay control circuits
Display drivers
Memory modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and marking codes. Confirm RoHS compliance status and lead-free manufacturing requirements prior to procurement. Ensure the component meets AEC-Q101 standards if utilized in automotive contexts. Validate that the SOT-363 package dimensions align with the target PCB footprint and mounting pad layout specifications.

Selection Notes

Select this component for applications requiring low-voltage switching with built-in electrostatic discharge protection. The dual-channel configuration in the SOT-363 package allows for space-constrained designs. Evaluate the on-resistance characteristics against the specific gate drive voltage available in the system to ensure efficient operation. Consider the thermal resistance limits when determining heat dissipation requirements for the application environment.

Part Context

This part belongs to the 2N7002KDW-AU series of N-Channel Enhancement Mode MOSFETs manufactured by Panjit International Inc. The series is designed to provide robust performance in small-signal switching applications while incorporating internal ESD protection mechanisms. The SOT-363 package provides a compact form factor suitable for surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter equivalence before considering alternative components from other manufacturers.