2N7002KDW-TP

Overview

The MCC 2N7002KDW-TP is a dual N-channel enhancement mode MOSFET housed in an SOT-363-6 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 340 mA. The device exhibits a maximum on-resistance of 5 Ohms at a gate-source voltage of 10 V, with a threshold voltage of 1 V. Power dissipation is rated at 150 mW, and the unit operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel transistors within a single compact footprint.
• Enhancement-mode operation optimized for low-voltage switching applications.
• Surface-mount construction designed for automated assembly processes.

Applications

• Battery protection circuits
• Load switching modules
• Power management systems

Procurement Notes

Verify the specific datasheet version prior to ordering, as electrical characteristics may vary between manufacturing revisions. Confirm that the SOT-363-6 package dimensions align with the target PCB layout. Ensure thermal management strategies account for the 150 mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when space constraints require dual switching functionality in a minimal outline package. The 60 V rating suits low-voltage DC systems, while the 340 mA current capacity supports moderate load requirements. Compare on-resistance values against alternative packages to ensure efficiency targets are met.

Part Context

This part belongs to the 2N7002 series of small-signal MOSFETs manufactured by Micro Commercial Components. It serves as a dual-transistor variant of the standard single-channel 2N7002, offering integrated switching solutions for compact electronic designs requiring multiple control elements.

Replacement Considerations

Cross-reference with other manufacturers' dual N-channel MOSFETs in SOT-363 packages. Verify pinout compatibility and electrical parameter equivalence before substituting.