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The 2N7002KDW-TPQ2 is a dual N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It features a silicon technology construction housed in an SOT-363-6 surface-mount package. The device supports a drain-source breakdown voltage of 60 V and a continuous drain current of 340 mA. Key electrical parameters include a gate-source voltage rating of ±20 V, a threshold voltage of 1 V, and a maximum power dissipation of 150 mW. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'Q2' against official Micro Commercial Components documentation to confirm automotive grade AEC-Q101 compliance. Ensure the ordering part number matches the exact datasheet revision required for your design specifications. Cross-reference the manufacturer's latest release notes for any changes in pinout or thermal characteristics before finalizing procurement.
Select this component when a dual N-channel topology is required within a minimal footprint. The SOT-363-6 package offers space efficiency compared to discrete single transistors. Consider the 150 mW power dissipation limit and thermal management requirements for high-current switching scenarios. Verify that the 60 V rating aligns with the system's maximum voltage stresses.
This part belongs to the 2N7002K series of small-signal MOSFETs from Micro Commercial Components. The series includes variants such as the standard 2N7002KDW-TP and the automotive qualified 2N7002KDW-TPQ2. These devices are designed for general-purpose switching and amplification applications, offering a balance of performance and cost-effectiveness in consumer and industrial electronics.
Direct substitutes include other dual N-channel MOSFETs in SOT-363 packages with similar 60V/340mA ratings. Verify pin compatibility and electrical parameters match exactly. Generic replacements may lack the specific automotive qualification associated with the Q2 suffix.