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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.115A SOT363
- Series：-
- Mfr：EVVO
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The EVVO 2N7002KDW is a dual N-channel enhancement mode MOSFET housed in an SOT-363 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA. The device exhibits a maximum on-resistance of 3 Ohms at Vgs=10V and 4 Ohms at Vgs=4.5V. Gate-source voltage limits are ±20 V, with a threshold voltage typically around 2.5 V. Total gate charge is approximately 800 pC. Power dissipation is rated at 200 mW, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- ESD protection capability up to 2 kV HBM
- Advanced trench process technology for low on-resistance
- Designed for battery-operated systems and solid-state relay drivers
Applications
- Solid-state relay drivers
- Battery-operated system power management
- Display and lamp driver circuits
- Solenoid control applications
Procurement Notes
Verify the manufacturer designation as EVVO against official component markings or datasheets, as this part number is widely produced by other manufacturers such as Panjit. Confirm RoHS compliance status and specific electrical tolerances directly with the supplier documentation before procurement to ensure alignment with design requirements.
Selection Notes
Select this component for applications requiring dual N-channel switching in a small surface-mount footprint. Ensure the required drain current does not exceed 115 mA and that the gate drive voltage aligns with the specified on-resistance characteristics. Verify thermal management capabilities given the 200 mW power dissipation limit in the SOT-363 package.
Part Context
This component belongs to the standard 2N7002 family of dual N-channel MOSFETs. It serves as a general-purpose switching device suitable for low-power digital and analog applications. The SOT-363 package allows for space-efficient PCB layouts compared to single-channel alternatives.
Replacement Considerations
Verified substitutes include Panjit 2N7002KDW and Diodes Inc. 2N7002K. Cross-reference pinouts and electrical parameters carefully when replacing components from different manufacturers to ensure functional compatibility.
