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Product Detailed Parameters
- Description：N-CHANNEL MOSFET DFN1006-3
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 40mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：80 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：100mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN1006-3
- Package / Case：SC-101, SOT-883
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Replacement Considerations
The provided documentation lists the 2N7002KDQ-TP, 2N7002KHE3-TP, and 2N7002KDWBQ-TP as available MCC products. However, no official substitute part numbers are explicitly confirmed for the 2N7002KL3-TP in the source material.
