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Product Detailed Parameters
- Description：MOSFET, SOT-323, 60V, 0.31A, 150
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：31 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：275mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Diotec Semiconductor 2N7002KPW-AQ is an N-Channel Enhancement Mode FET housed in a SOT-323 package. It features a drain-source voltage of 60 V, continuous drain current of 310 mA at 25°C, and peak drain current of 1.2 A. The device has a maximum power dissipation of 275 mW and operates up to a junction temperature of +150°C. Key electrical parameters include a gate-source threshold voltage ranging from 1.1 V to 2.1 V, on-state resistance below 1.6 Ω at 10 V gate drive, and forward transconductance of 307 mS. Dynamic characteristics show turn-on delay of 4.8 ns and total gate charge of 1.1 nC.
Feature Summary
- ESD protected gate structure
- Low on-state resistance for efficient switching
- Fast switching times suitable for high-frequency applications
Applications
- Signal processing circuits
- Driver stages
- Logic level converters
Procurement Notes
Verify the specific suffix against official documentation to confirm qualification status. The -AQ suffix indicates AEC-Q101 qualified automotive grade components, while -Q denotes compliance. Ensure procurement channels provide valid traceability documents matching the exact part marking MT. Confirm RoHS compliance and REACH status through manufacturer declarations prior to integration into final assemblies.
Selection Notes
Select this component for designs requiring compact SOT-323 packaging with low on-resistance and fast switching capabilities. Consider the 60 V breakdown voltage and 310 mA continuous current limits when sizing for load requirements. Evaluate thermal management needs based on the 275 mW power dissipation rating and ambient temperature conditions. Verify logic compatibility with the specified gate threshold voltage range for reliable signal processing or driver stage operation.
Part Context
This component belongs to Diotec's N-Channel Enhancement Mode FET lineup, designed for commercial and industrial grade applications. The product line includes variants with different qualification levels, such as standard commercial grades and automotive-specific versions meeting AEC-Q101 standards. The 2N7002KPW series provides a balance of performance and size for general-purpose switching tasks.
Replacement Considerations
Cross-reference pinouts and electrical specifications carefully when substituting. Verify that alternative parts meet or exceed the 60 V drain-source voltage and 310 mA current ratings. Ensure compatible gate threshold voltages and package dimensions for direct footprint replacement without PCB redesign.
