2N7002KPW

2N7002KPW

$0.03
  • Description:MOSFET SOT-323 N 60V 0.31A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:773c68120839 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET SOT-323 N 60V 0.31A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:31 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):275mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-323
  • Package / Case:SC-70, SOT-323

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2N7002KPW

Overview

The Diotec Semiconductor 2N7002KPW is an N-Channel Enhancement Mode Field Effect Transistor housed in a SOT-323 surface-mount package. It features a Drain-Source voltage (VDS) of 60 V and a continuous Drain current (ID) of 310 mA at 25°C ambient temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 1.6 Ω at VGS = 10 V and ID = 500 mA, or 2 Ω at VGS = 5 V and ID = 50 mA. Peak Drain current reaches 1.2 A for pulses up to 10 µs. Power dissipation is rated at 275 mW, with a maximum junction temperature of +150°C. Gate-Source voltage limits are ±20 V DC and ±2 kV ESD.

Feature Summary

  • ESD protected gate structure
  • Low on-state resistance
  • Fast switching times

Applications

  • Signal processing
  • Driver stages
  • Logic level converter

Procurement Notes

Verify the specific suffix when ordering: -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm RoHS compliance status and REACH regulations during procurement. Ensure the component matches the commercial/industrial grade specifications unless automotive-grade variants are explicitly required.

Selection Notes

Select this component for applications requiring logic-level switching with low on-resistance. Verify that the 60 V drain-source voltage and 310 mA continuous current ratings exceed the circuit requirements. Consider the thermal resistance of 455 K/W and ensure adequate PCB solder pad sizing to maintain power dissipation within the 275 mW limit.

Part Context

This part belongs to the 2N7002 series of N-Channel Enhancement Mode FETs manufactured by Diotec Semiconductor. It utilizes the SOT-323 case style and is designed for standard commercial and industrial applications. The product line includes variants with different automotive qualifications based on the ordering suffix.

Replacement Considerations

Check for equivalent parts from other manufacturers offering similar 60 V, SOT-323 N-Channel MOSFETs. Ensure replacement components match the RDS(on) and VGS(th) specifications. Automotive replacements must meet AEC-Q101 standards if the original -AQ suffix was specified.

2N7002KPW2N7002KPW
$0.03
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