ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2N7002 FAMILY SOT23 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The Diodes Incorporated 2N7002KQ-13 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage of 60V and a continuous drain current of 380mA at VGS=10V. The device offers a low on-state resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. Packaged in a standard SOT23 case, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 370mW.
Feature Summary
- Low on-resistance optimized for high efficiency
- Fast switching speed with low input capacitance
- ESD protection up to 2kV
- Totally lead-free and fully RoHS compliant
Applications
- Motor control
- Power management functions
- Backlighting
Procurement Notes
Verify the specific Q-suffix designation against official automotive compliance documentation to confirm AEC-Q100/101 qualification status. Ensure the ordering suffix matches the required tape and reel packaging quantity. Confirm that the component meets all applicable legal and regulatory requirements for the intended application environment before finalizing procurement.
Selection Notes
Select this component when a robust N-channel MOSFET with low on-resistance is required for logic-level switching applications. The SOT23 package provides a compact surface-mount solution suitable for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state and transient conditions to ensure reliable operation within the operating temperature range.
Part Context
This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It serves as an automotive-compliant variant, distinct from the standard commercial versions. The device utilizes silicon technology and is housed in a molded plastic SOT23 case with matte tin annealed terminals over an alloy 42 leadframe.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts qualified to AEC-Q100/101/200 standards. Consult the manufacturer's website for a complete listing of compatible automotive-grade alternatives.
