ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2N7002KQB/SOT8015/DFN1110D-3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：720mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 720mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.92 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：420mW (Ta), 4.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：DFN1110D-3
- Package / Case：3-XDFN Exposed Pad
Download product information
Overview
The Nexperia 2N7002KQB is a 60 V N-channel Trench MOSFET housed in an ultra-small DFN1110D-3 (SOT8015) leadless package. It features side wettable flanks for optical solder inspection and exceeds 1 kV HBM ESD protection. The device supports a continuous drain current of 720 mA at 25 °C with a maximum on-state resistance of 850 mΩ at VGS = 10 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Logic-level compatible gate drive
- Side wettable flanks for optical solder inspection
- ESD protection exceeding 1 kV HBM
- AEC-Q101 qualified for automotive use
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix KQB corresponds to the DFN1110D-3 package variant. Confirm AEC-Q101 qualification status if automotive deployment is required. Ensure PCB footprint matches SOT8015 dimensions. Check RoHS compliance documentation for final assembly requirements.
Selection Notes
Select this component when space constraints require an extremely thin leadless package. The high drain current capability suits low-side switching applications. Logic-level compatibility allows direct interfacing with standard digital controllers. Automotive qualification makes it suitable for rigorous environmental conditions.
Part Context
This part belongs to the 2N7002 family of N-channel enhancement mode FETs. It utilizes Trench MOSFET technology for improved performance. The manufacturer is Nexperia USA Inc., formerly part of NXP Standard Products. The device represents a modern evolution of discrete power semiconductors for compact designs.
Replacement Considerations
Direct substitutes include other 60 V N-channel MOSFETs in DFN1110D-3 packages from the same manufacturer. Verify pinout compatibility and thermal resistance values before substitution.
