2N7002KW

$0.11

Description：60V 340MA 5@10V,500MA 200MW 2.5V
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5631997e4fdc Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：60V 340MA 5@10V,500MA 200MW 2.5V
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Download product information

2N7002KW

Overview

The 2N7002KW is an N-channel enhancement mode MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a high-density cell design for low on-resistance and operates as a voltage-controlled small-signal switch with ESD protection. The device is housed in a compact SOT-323 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 60V, a continuous drain current of 340mA, and a maximum power dissipation of 0.2W at 25°C ambient temperature.

Feature Summary

High-density cell architecture designed to minimize on-resistance
Voltage-controlled operation suitable for small-signal switching applications
Integrated electrostatic discharge (ESD) protection mechanisms
Rugged construction ensuring reliable performance under standard operating conditions

Applications

Load switching for portable electronic devices
DC/DC converter circuits
General-purpose signal switching

Procurement Notes

Verify the manufacturer designation matches Shenzhen Slkormicro Semicon Co., Ltd. when sourcing this component. Confirm the physical package type is SOT-323 to ensure compatibility with existing board layouts. Cross-reference the part number against official datasheets to validate specific electrical ratings such as the 60V breakdown voltage and 340mA current limits before finalizing procurement orders.

Selection Notes

Select the 2N7002KW for applications requiring a compact N-channel MOSFET with a 60V rating. Ensure the required continuous drain current does not exceed 340mA and that the thermal environment supports the 0.2W power dissipation limit. Verify that the gate threshold voltage range aligns with the driving logic levels available in the target circuit design.

Part Context

This component belongs to the category of plastic-encapsulated MOSFETs designed for surface-mount technology. It serves as a voltage-controlled switch within semiconductor transistor arrays. The SOT-323 package provides a three-terminal configuration optimized for space-constrained printed circuit board implementations in consumer electronics and industrial control systems.