2N7002KW_R1_00001

$0.14

Description：SOT-323, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:779883aa429e Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：SOT-323, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：35 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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2N7002KW_R1_00001

Overview

The 2N7002KW_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-323 package. It features an advanced trench process and high-density cell design for ultra-low on-resistance. Key electrical parameters include a drain-source breakdown voltage of 60V, continuous drain current of 115mA, and pulsed drain current of 800mA. The device offers a maximum RDS(on) of 4Ω at VGS=4.5V and 3Ω at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and includes ESD protection rated at 2kV HBM.

Feature Summary

Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
ESD Protected 2KV HBM

Applications

Battery Operated Systems
Solid-State Relays Drivers
Relays, Displays, Lamps, Solenoids, Memories

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and halogen-free molding compound requirements with the manufacturer before procurement. Ensure the component lot number is recorded for tracking purposes as per Panjit's standard procedures.

Selection Notes

Select this component for low-voltage switching applications requiring minimal leakage current and robust ESD protection. The SOT-323 package suits space-constrained designs. Evaluate thermal resistance characteristics for surface-mounted implementations on FR4 boards. Consider the gate threshold voltage range for compatibility with logic-level drive signals.

Part Context

This part belongs to the 2N7002KW series of N-Channel Enhancement Mode MOSFETs from Panjit. It utilizes silicon technology and is designed for general-purpose switching tasks. The product complies with EU RoHS directives and uses green molding compound. It is intended for commercial electronics rather than automotive or life-critical systems.