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Product Detailed Parameters
- Description：N-CHANNEL MOSFET,SOT-323
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：18 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：416mW (Tj)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The MCC 2N7002KWBQ-TP is an N-channel MOSFET utilizing Trench MV technology, packaged in SOT-323. It features a drain-source voltage of 60V and a continuous drain current of 212mA at 25°C. The device has a maximum gate-source voltage of ±20V and total power dissipation of 416mW. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V and a drain-source on-resistance of 1.1Ω to 2.0Ω at VGS=10V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards
- ESD protected up to 2KV (HBM)
- Halogen-free green device with UL 94 V-0 flammability rating
Applications
- Automotive electronic circuits
- Low voltage small signal switching
- Power MOSFET gate drivers
Procurement Notes
Verify the component against official Micro Commercial Components datasheets to confirm authenticity. Ensure the ordering suffix matches the required RoHS compliance and tape-and-reel packaging specifications. Purchase only from authorized distributors to avoid counterfeit parts and ensure full traceability and warranty coverage.
Selection Notes
Select this component for applications requiring automotive-grade reliability and high ESD protection. The SOT-323 package suits space-constrained designs. Verify that the 212mA continuous current and 60V breakdown voltage meet the specific circuit requirements. Consider the thermal resistance characteristics for proper heat dissipation in the final assembly.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode field-effect transistors. Manufactured by Micro Commercial Components, it employs trench metal-oxide-semiconductor technology. The device is designed for general-purpose switching applications, offering robust performance in compact surface-mount configurations.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not match the specific automotive qualification or exact electrical tolerances of the original component.
