2N7002L

$0.18

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e8364e687e2c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002L

Overview

The onsemi 2N7002L is a small signal N-channel enhancement mode MOSFET designed for surface-mount applications. It features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 115 mA at 25°C. The device exhibits a maximum Drain-Source On-Resistance (Rds(on)) of 7.5 Ω at Vgs = 10 V. It operates within a junction temperature range of -55°C to +150°C and is housed in a compact SOT-23 (TO-236AB) package.

Feature Summary

Logic-level gate drive capability allows direct interfacing with standard logic outputs.
Integrated gate-source Zener diode provides electrostatic discharge protection.
Designed for low-power switching applications requiring minimal footprint.

Applications

Battery management systems
Power management circuits
Load switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the date code and lot traceability with authorized distribution channels to guarantee authenticity and supply chain integrity before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel switch is required for low-current loads up to 115 mA. Verify that the 60 V breakdown voltage exceeds the maximum circuit potential. Confirm that the 7.5 Ω on-resistance is acceptable for the intended power dissipation limits within the SOT-23 thermal constraints.

Part Context

This part belongs to the widely used 2N7002 family of general-purpose small signal MOSFETs. It serves as a surface-mount alternative to through-hole variants, maintaining similar electrical characteristics while offering reduced board space consumption. The device is commonly utilized in portable electronics and consumer appliances where size and cost efficiency are critical design factors.

Replacement Considerations

Direct pin-compatible substitutes include the 2N7002A and 2N7002K. Verify that alternative manufacturers' parts meet the same 60 V rating and 115 mA current handling capabilities before implementation.

FAQ

Does the 2N7002L include built-in ESD protection?

Yes, the device incorporates an integrated gate-source Zener diode specifically designed to protect the gate oxide from electrostatic discharge damage.