2N7002LT7G

$0.18

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7a30a39c9fcf Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002LT7G

Overview

The onsemi 2N7002LT7G is a small-signal N-channel MOSFET housed in an SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 Vdc and a continuous drain current rating of 115 mA at 25°C. The device exhibits a maximum static drain-source on-state resistance of 7.5 Ohms at VGS = 10 V and ID = 500 mA, or 7.5 Ohms at VGS = 5 V and ID = 50 mA. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

High-density cell design for minimized on-state resistance
Voltage-controlled switching capability
Lead-free and halogen-free compliant construction

Applications

Low voltage and low current signal switching
Power MOSFET gate drive circuits
Small servo motor control applications

Procurement Notes

Verify the specific ordering suffix 'LT7G' against official documentation to confirm the 3,500-unit tape and reel packaging configuration. Ensure that the selected component meets all required environmental standards, including RoHS compliance, before finalizing procurement specifications.

Selection Notes

Select this component when a compact N-channel enhancement mode MOSFET is required for low-power switching tasks. Consider the 60 V drain-source voltage and 115 mA continuous current limits to ensure adequate headroom for the intended circuit load and operating conditions.

Part Context

This part belongs to the 2N7002L family of small-signal MOSFETs manufactured by onsemi. The LT7G suffix specifically denotes the standard tape and reel packaging format containing 3,500 units per reel, designed for automated surface-mount assembly processes.