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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002LT7H is an N-channel enhancement-mode small signal MOSFET housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device exhibits a maximum static drain-source on-state resistance of 7.5 Ω at a gate-source voltage of 10 V and a drain current of 500 mA. Operating characteristics include a junction temperature range from -55°C to +150°C, with total device dissipation rated at 225 mW on an FR-5 board and 300 mW on an alumina substrate.
Feature Summary
- Enhancement mode operation for efficient switching control
- Lead-free construction compliant with RoHS standards
- Halogen-free and brominated flame retardant-free composition
Applications
- Low-side load switching applications
- General-purpose digital logic level translation circuits
- Battery protection systems requiring compact packaging
Procurement Notes
Verify the specific ordering suffix LT7H against official documentation to confirm the 3,500-unit tape and reel configuration. Ensure that the component meets all applicable automotive quality requirements if utilized in such environments, as standard variants may differ from qualified versions.
Selection Notes
Select this component when a compact N-channel MOSFET with a 60 V rating is required for low-current switching tasks. Evaluate thermal constraints carefully, as the SOT-23 package limits power dissipation. Confirm that the 7.5 Ω on-resistance aligns with the target circuit's voltage drop specifications.
Part Context
This part belongs to the 2N7002L series of small signal MOSFETs manufactured by onsemi. The series provides a standardized solution for general-purpose switching applications where space efficiency is critical. The LT7H designation specifically identifies the tape and reel packaging format used for automated assembly processes.
Replacement Considerations
Cross-reference with other manufacturers offering equivalent N-channel MOSFETs in the SOT-23 package. Verify that alternative parts match the 60 V breakdown voltage and 115 mA current ratings to ensure functional compatibility within the existing circuit design.
