2N7002PSZ

Overview

The Nexperia 2N7002PSZ is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT363 (SC-88) package. It features a drain-source voltage of 60 V and a continuous drain current of 320 mA per transistor. The device exhibits a maximum on-state resistance of 1.6 Ω at VGS = 10 V and ID = 500 mA. Gate-source voltage limits are ±20 V, with a threshold voltage range of 1.1 V to 2.4 V. Total gate charge is typically 0.6 nC. Operating junction temperature reaches 150 °C, with an ambient range of -55 °C to +150 °C.

Feature Summary

• Logic-level compatible for direct interface with standard logic outputs
• Very fast switching performance enabled by Trench MOSFET technology
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation before finalizing designs. Confirm that the component remains suitable for the intended application environment. Check for any recent updates to the data sheet regarding marking codes or pinning configurations. Ensure compliance with RoHS directives as specified in the official product specifications.

Selection Notes

Select this component when space constraints require a dual configuration within a compact SOT363 footprint. Consider its logic-level compatibility for low-voltage control applications. Evaluate thermal management requirements based on the specified power dissipation limits and thermal resistance values. Verify that the 60 V rating provides sufficient margin for the target circuit's operating conditions.

Part Context

This dual N-channel MOSFET belongs to Nexperia's portfolio of small-signal switching devices designed for surface-mount assembly. The SOT363 package allows for high-density PCB layouts. The use of Trench technology contributes to improved switching speeds and lower on-state resistance compared to planar alternatives. It serves as a compact solution for controlling multiple loads in space-sensitive electronic designs.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in the SOT363 package with matching electrical ratings. Verify pinout compatibility and thermal characteristics when replacing. Cross-reference with Nexperia's internal cross-reference lists for confirmed equivalent part numbers.