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Product Detailed Parameters
- Description：MOSFET N-CH 60V 310MA SC75
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SC-75
- Package / Case：SC-75, SOT-416
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Overview
The 2N7002PT,115 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a small SC-75 (SOT416) surface-mounted device plastic package with three leads. The component supports a drain-source voltage of 60 V and a continuous drain current of 310 mA at 25 °C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-state resistance of 1.6 Ω at VGS=10V, and a total gate charge of 0.8 nC. It operates within an ambient temperature range of -55 °C to +150 °C.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Very fast switching performance enabled by Trench MOSFET technology
- Qualified according to AEC-Q101 automotive standards
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a compact N-channel switch is required for low-voltage applications. The SC-75 package offers space efficiency compared to larger SOT-23 variants. Ensure the design accounts for the thermal resistance characteristics, as power dissipation capabilities are limited in free air without adequate PCB copper area for heat sinking.
Part Context
This part belongs to the 2N7002 family of N-channel MOSFETs originally developed by NXP Semiconductors. Following the divestiture of the Standard Product business in February 2017, production and support were transferred to Nexperia. The datasheet retains original NXP branding but indicates the current manufacturer is Nexperia B.V.
Replacement Considerations
Direct pin-compatible replacements from other manufacturers may include parts such as the BSS138 or similar N-channel MOSFETs in SOT416 packages, provided their voltage and current ratings meet or exceed the 60 V and 310 mA specifications.
