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The 2N7002T-7-G is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-523 package with a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device exhibits a maximum on-resistance of 7.5 ohms at 5V gate drive and operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix against manufacturer documentation to confirm compliance with lead-free and halogen-free requirements. Ensure the ordering part number matches the exact electrical specifications required for the target application, as variations may exist within the product family.
Select this component for applications requiring a compact N-channel MOSFET with moderate voltage ratings. The SOT-523 package offers a small footprint compared to standard SOT-23 devices. Consider the 115 mA continuous current limit and thermal dissipation characteristics when designing the circuit layout.
This device belongs to the 2N7002 series of N-channel enhancement mode field-effect transistors. It is designed for general-purpose switching applications where low cost and small size are critical. The product line includes various packages such as SOT-23 and dual configurations like the 2N7002DW.
Compatible substitutes include the 2N7002H-7 and 2N7002DWQ-7-F from Diodes Incorporated. Cross-manufacturer equivalents in the SOT-523 package should be verified for matching pinout and electrical parameters.