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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The 2N7002T-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-523 package. It features a drain-source breakdown voltage of 60V and a continuous drain current of 115mA at +25°C. The device exhibits a maximum on-resistance of 7.5Ω at VGS=5V and ID=50mA, with a gate threshold voltage ranging from 1.0V to 2.0V. Total power dissipation is rated at 150mW, and the operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed capabilities
- Ultra-small surface mount package design
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, and displays
Procurement Notes
Verify that the specific ordering suffix matches the required packaging quantity, as datasheet documentation indicates variations such as tape and reel configurations. Confirm compliance requirements against relevant directives including EU RoHS standards. Ensure the component meets environmental specifications regarding halogen and antimony content if designated as a green device. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET is required for low-voltage switching applications. The SOT-523 package suits designs with strict space constraints. Evaluate the 60V breakdown voltage and 115mA current limits against circuit demands. Consider the thermal resistance characteristics for heat dissipation in enclosed environments. Verify compatibility with standard drive voltages given the specified gate threshold range.
Part Context
This component belongs to the 2N7002 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes vertical DMOS technology to achieve low on-resistance while maintaining fast switching performance. The product line includes various package options and packaging configurations to accommodate different manufacturing needs and board layout requirements.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Generic cross-references may not match exact electrical parameters or package dimensions.
FAQ
What is the maximum gate-source voltage rating?
The continuous gate-source voltage rating is ±20V, while the pulsed rating is ±40V.
How does the on-resistance vary with temperature?
The static drain-source on-resistance increases significantly at higher temperatures, reaching a maximum of 13.5Ω at TJ = +125°C under specific test conditions.
