ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-523
- Series：-
- Mfr：EVVO
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Download product information
Overview
The EVVO 2N7002T is a surface-mount N-channel enhancement mode MOSFET housed in an SOT-523 package. It features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 300 mA at 25°C ambient temperature, with a maximum power dissipation of 350 mW. The device exhibits a maximum on-resistance of 3 ohms at 500 mA and 10 V gate-source voltage. The gate threshold voltage is specified as a maximum of 2.5 V at 250 µA, while the maximum gate-source voltage rating is ±20 V. Input capacitance is limited to 50 pF at 25 V, and the operating junction temperature range spans from -55°C to 150°C.
Feature Summary
- N-channel enhancement mode construction for logic-level switching applications
- Low on-resistance characteristics optimized for efficient conduction
- Small SOT-523 surface-mount footprint suitable for space-constrained designs
Applications
- Battery protection circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the manufacturer designation as EVVO against the specific ordering code suffixes such as TR, CT, or DKR to ensure component authenticity. Confirm that the SOT-523 package dimensions align with the target PCB layout requirements. Check RoHS compliance status and moisture sensitivity level classifications prior to assembly planning to maintain supply chain integrity and manufacturing standards.
Selection Notes
Select this component when a compact N-channel MOSFET with 60 V capability and moderate current handling is required. The low gate threshold voltage facilitates direct interfacing with standard logic outputs. Ensure the thermal design accommodates the 350 mW power dissipation limit within the intended operating environment and board copper area constraints.
Part Context
This part belongs to the general category of small-signal N-channel MOSFETs commonly used in portable electronics and battery-powered devices. The SOT-523 package provides a reduced footprint compared to traditional SOT-23 variants, allowing for higher density circuit board layouts while maintaining comparable electrical performance profiles for low-power switching tasks.
Replacement Considerations
Cross-reference with other manufacturers offering equivalent 60 V N-channel MOSFETs in SOT-523 packages, ensuring matching pinouts and electrical parameters such as Rds(on) and Vgs(th) are verified before substitution.
