2N7002TC

Overview

The 2N7002TC is a surface-mount N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 170mA at an ambient temperature of +25°C, with a total power dissipation rating of 370mW under standard mounting conditions. Its static drain-source on-resistance is specified as 7.5Ω at a gate-source voltage of 5V and 50mA drain current, or 3.2Ω at 10V and 500mA. The component utilizes a SOT-23 package.

Feature Summary

• Designed for high-efficiency power-management applications through minimized on-state resistance while maintaining superior switching performance.
• Features low gate threshold voltage and low input capacitance to facilitate direct logic-level driving.
• Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.
• Constructed using halogen- and antimony-free green molding compound in a small surface-mount package.

Applications

• Motor controls
• Power-management functions

Procurement Notes

Verify the specific suffix 'TC' against official manufacturer documentation to confirm its exact meaning regarding packaging or binning. Standard ordering information lists '2N7002-7-F' and '2N7002-13-F'. Ensure the selected variant matches the required tape and reel quantity and that the component meets all applicable environmental compliance standards for the intended deployment environment.

Selection Notes

Select this component when a compact N-channel MOSFET is required for low-voltage switching tasks. The 60V breakdown voltage and 170mA continuous current rating suit general-purpose signal and load switching. Consider the thermal resistance characteristics and derating curves if operating in enclosed spaces or elevated ambient temperatures to ensure reliable long-term operation.

Part Context

This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is widely utilized in consumer electronics and industrial equipment for small-signal switching and level shifting. The device represents a standard industry solution for logic-controlled power management in space-constrained printed circuit board designs.

Replacement Considerations

Cross-reference with other manufacturers offering the 2N7002 designation. Verify pinout compatibility and electrical parameter tolerances before substitution.

FAQ

What is the maximum pulsed drain current for the 2N7002?

The maximum pulsed drain current is 800mA, based on a 10µs pulse duration with a 1% duty cycle.

Does the 2N7002 include internal protection features?

Yes, the datasheet indicates the presence of a Gate-Source Zener diode providing ESD protection.