2N7002TQ-7-F

$0.26

Description：MOSFET N-CH 60V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:684e59048067 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Download product information

2N7002TQ-7-F

Overview

The 2N7002TQ-7-F is an N-channel enhancement mode MOSFET in a SOT523 surface-mount package. It features a drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 115mA at +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 7.5Ω at VGS = 5V and 10V. Total power dissipation (PD) is 150mW, with an operating temperature range from -55°C to +150°C. It is AEC-Q101 qualified for automotive applications.

Feature Summary

AEC-Q101 qualified for automotive applications
Low on-state resistance and low gate threshold voltage
Fast switching speed and low input/output leakage
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards if used in vehicle systems. Ensure the selected part number aligns with the intended thermal and electrical requirements of the target circuit design.

Selection Notes

Select this component for high-efficiency power management applications requiring small surface mount packages. Consider the 150mW power dissipation limit and the 833°C/W thermal resistance when designing heat management strategies. Verify compatibility with logic-level driving voltages given the specified gate threshold characteristics.

Part Context

This component belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a silicon technology process and is housed in a compact SOT523 case. The device is designed to minimize on-state resistance while maintaining superior switching performance for various electronic circuits.