2N7002VA

2N7002VA

$0.99
  • Description:MOSFET 2N-CH 60V 0.28A SOT563F
  • Series:-

SKU:41b68a904240 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.28A SOT563F
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:280mA
  • Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:250mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563F
  • Grade:-
  • Qualification:-

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2N7002VA

Overview

The onsemi 2N7002VA is an N-channel enhancement mode MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 115 mA at 25°C. The device utilizes high-density cell architecture to achieve a low on-state resistance (Rds(on)) of 7.5 Ω at Vgs = 5 V. Packaged in a compact SOT-23 surface-mount housing with three pins, it offers a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C and includes an internal body diode with a forward voltage of approximately 1.2 V.

Feature Summary

  • High-density DMOS technology minimizes on-state resistance while maintaining robust switching performance.
  • Voltage-controlled small-signal switch suitable for low-power signal processing and load management.
  • Compact SOT-23 surface-mount package enables space-efficient circuit board layouts.

Applications

  • Battery protection circuits
  • Load switching applications
  • Power management systems

Procurement Notes

Verify the specific suffix 'VA' against official manufacturer documentation to confirm exact binning or testing criteria, as standard datasheets may list generic part numbers. Confirm RoHS compliance status and packaging options directly with authorized distributors. Ensure the ordering information matches the required tape-and-reel specifications for automated assembly processes.

Selection Notes

Select this component for applications requiring a 60 V breakdown voltage and moderate current handling up to 115 mA. The 7.5 Ω Rds(on) specification is critical for minimizing conduction losses in low-voltage DC circuits. Consider the SOT-23 footprint constraints and thermal dissipation limits when designing the PCB layout for sustained operation near the maximum power rating.

Part Context

This device belongs to the 2N7002 series of N-channel enhancement mode MOSFETs produced by onsemi. The series is widely recognized for its use in general-purpose switching tasks where small form factors are required. The 2N7002VA variant shares core electrical characteristics with other members of the family but may differ in specific manufacturing lot attributes or packaging configurations defined by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers include ZVN3310FTA from Vishay and 2N7002L from onsemi. Verify pinout compatibility and electrical parameter tolerances before substitution to ensure circuit integrity.

2N7002VA2N7002VA
$0.99
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