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The onsemi 2N7002VA is an N-channel enhancement mode MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 115 mA at 25°C. The device utilizes high-density cell architecture to achieve a low on-state resistance (Rds(on)) of 7.5 Ω at Vgs = 5 V. Packaged in a compact SOT-23 surface-mount housing with three pins, it offers a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C and includes an internal body diode with a forward voltage of approximately 1.2 V.
Verify the specific suffix 'VA' against official manufacturer documentation to confirm exact binning or testing criteria, as standard datasheets may list generic part numbers. Confirm RoHS compliance status and packaging options directly with authorized distributors. Ensure the ordering information matches the required tape-and-reel specifications for automated assembly processes.
Select this component for applications requiring a 60 V breakdown voltage and moderate current handling up to 115 mA. The 7.5 Ω Rds(on) specification is critical for minimizing conduction losses in low-voltage DC circuits. Consider the SOT-23 footprint constraints and thermal dissipation limits when designing the PCB layout for sustained operation near the maximum power rating.
This device belongs to the 2N7002 series of N-channel enhancement mode MOSFETs produced by onsemi. The series is widely recognized for its use in general-purpose switching tasks where small form factors are required. The 2N7002VA variant shares core electrical characteristics with other members of the family but may differ in specific manufacturing lot attributes or packaging configurations defined by the manufacturer.
Publicly confirmed substitute part numbers include ZVN3310FTA from Vishay and 2N7002L from onsemi. Verify pinout compatibility and electrical parameter tolerances before substitution to ensure circuit integrity.