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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Diodes Incorporated 2N7002W-7-F is an N-channel enhancement mode MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 115 mA. The device offers a typical on-resistance (Rds(on)) of 13.5 Ω at Vgs = 10 V, with a gate-source threshold voltage ranging from 1.0 V to 2.5 V. Packaged in the compact SC-70 (SOT-323) surface-mount format, it supports a maximum power dissipation of 200 mW and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Compact SC-70 surface-mount package for space-efficient circuit design
- Low gate threshold voltage enabling direct logic-level drive compatibility
- High input impedance and fast switching performance suitable for signal processing
Applications
- Signal processing circuits
- Load switching applications
- Level shifting interfaces
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging specifications. Ensure that the selected component meets the required thermal and voltage ratings for the intended application environment before finalizing procurement decisions.
Selection Notes
Select this component when a small-form-factor N-channel MOSFET is required for low-current switching tasks. Consider the 13.5 Ω on-resistance and 115 mA current limit to ensure adequate performance margins. Verify that the SC-70 package dimensions align with the target PCB layout constraints.
Part Context
This device belongs to the 2N7002 series of N-channel enhancement mode field-effect transistors. It is engineered for general-purpose low-voltage switching and signal isolation tasks. The series is characterized by its reliability in consumer electronics and industrial control systems requiring compact semiconductor solutions.
Replacement Considerations
Compatible substitutes include the 2N7002W from Diotec Semiconductor and other generic 2N7002 variants in SOT-323 packages. Confirm pinout compatibility and verify that substitute parameters such as Rds(on) and Vgs(th) fall within acceptable operational limits.
