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Product Detailed Parameters
- Description：MOSFET N-CH 60V 0.115A SOT323
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Comchip Technology 2N7002W-HF is an N-channel enhancement mode field effect transistor housed in a SOT-323 surface mount package. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at +25°C. The device exhibits a low on-state resistance of 7.5Ω at VGS = 5V, with a gate threshold voltage ranging from 1.0V to 2.0V. Total power dissipation is rated at 200mW, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control
- Power management functions
Procurement Notes
Verify that the specific ordering suffix matches the required packaging format. Confirm compliance with environmental directives such as RoHS 3 and REACH. Ensure the component meets the moisture sensitivity level requirements for your assembly process. Validate that the manufacturer's quality certifications align with your supply chain standards before finalizing procurement.
Selection Notes
Select this component when a compact N-channel MOSFET with a 60V rating is required. Consider its low on-resistance for minimizing conduction losses in small signal applications. Evaluate the thermal characteristics against your system's heat dissipation capabilities. Verify that the SOT-323 package dimensions fit within your PCB layout constraints.
Part Context
This part belongs to the family of N-channel enhancement mode field effect transistors designed for general-purpose switching. It utilizes DMOS technology to achieve low on-resistance while maintaining robust switching performance. The device is intended for use in applications requiring efficient power handling in a minimal footprint.
Replacement Considerations
Cross-reference with other manufacturers offering the 2N7002W designation in the SOT-323 package. Verify pinout compatibility and electrical parameter equivalence, particularly regarding RDS(on) and BVDSS. Check for any differences in thermal resistance or package outline dimensions.
