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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN62D0LFD-13 is an N-channel enhancement mode MOSFET from the 2N7002 Family, manufactured by Diodes Incorporated. It utilizes an X1-DFN1212-3 surface-mount package and operates with a silicon technology base. Key electrical specifications include a drain-source breakdown voltage of 60 V and a continuous drain current of 310 mA. The device features a maximum on-resistance of 2 Ohms at specified gate-source voltages, with a threshold voltage of 1 V. It supports a wide operating temperature range from -55 C to +150 C and has a power dissipation rating of 800 mW.
Feature Summary
- Utilizes advanced trench process technology for ultra-low on-resistance
- High density cell design optimized for battery-operated systems
- Specially designed for solid-state relay drivers including relays, displays, lamps, solenoids, and memories
Applications
- Battery operated systems
- Solid-state relay drivers
- Motor controllers
- Power management functions
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation to ensure accuracy, as generic identifiers may vary across distributors. Confirm RoHS compliance status and moisture sensitivity level (MSL) ratings prior to procurement. Ensure that the ordering suffix matches the required packaging format, such as cut tape or reel quantities, to align with assembly line requirements.
Selection Notes
Select this component for low-voltage switching applications requiring high density and fast switching speeds. Consider the 60V drain-source voltage and 310mA current capabilities when designing load circuits. Evaluate the thermal performance based on the 800mW power dissipation limit and the specific thermal resistance characteristics of the chosen package type for the intended operating environment.
Part Context
This component belongs to the widely used 2N7002 family of N-channel enhancement mode field-effect transistors. These devices are standard small-signal FETs designed for general-purpose switching and amplification in low-power electronic circuits. The specific variant integrates modern manufacturing processes to improve efficiency and reduce footprint compared to legacy versions.
Replacement Considerations
Compatible substitutes include the 2N7002WT1G from onsemi and the 2N7002W from Diotec Semiconductor. Verify pinout compatibility and electrical parameter tolerances before substitution.
