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Product Detailed Parameters
- Description：MOSFET N-CH 60V 0.115A SC70
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70-3 (SOT323)
- Package / Case：SC-70, SOT-323
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Overview
The onsemi 2N7002WST1G is an N-channel enhancement mode MOSFET designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 340 mA at 25°C. The device utilizes a compact SC-70 (SOT-323) three-pin package with a height of 0.9 mm. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2.5 Ω at Vgs = 10 V, a typical gate charge (Qg) of 0.7 nC at Vgs = 4.5 V, and a power dissipation (Pd) of 330 mW. The component operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- ESD protected structure for enhanced reliability in sensitive circuits
- Low on-resistance optimized for efficient power switching
- Small footprint surface mount package suitable for space-constrained designs
- AEC-Q101 qualified for automotive and high-reliability applications
Applications
- Low side load switching
- Level shifting circuits
- DC-DC converter stages
- Portable electronics such as digital still cameras, PDAs, and cell phones
Procurement Notes
Verify the specific suffix 'ST1G' against official onsemi documentation to confirm tape-and-reel packaging details and lot traceability requirements. Ensure that the AEC-Q101 qualification status aligns with your project's automotive or industrial reliability standards. Confirm RoHS compliance and halogen-free status if required by your manufacturing specifications. Cross-reference the SC-70 package dimensions with your PCB footprint library to ensure mechanical compatibility.
Selection Notes
Select this component when a small signal N-channel MOSFET with 60 V breakdown and low gate charge is required. The SC-70 package offers a minimal board area compared to larger SOT-23 variants. Consider the 2.5 Ω Rds(on) limit for low-current switching applications where efficiency is secondary to size. Verify that the 340 mA continuous current rating meets the load requirements under expected thermal conditions.
Part Context
This part belongs to the 2N7002W series of small signal MOSFETs from onsemi. The series is characterized by its suitability for portable consumer electronics and automotive systems requiring unique site control. The 'W' prefix often denotes specific automotive qualification or material composition variations within the broader 2N7002 family. It serves as a discrete solution for low-power switching tasks in compact form factors.
Replacement Considerations
Direct substitutes include the 2N7002WT1G from onsemi, which shares identical electrical characteristics and package type. Other manufacturers may offer pin-compatible alternatives in the SC-70/SOT-323 package with similar 60 V/340 mA ratings, but verification of Rds(on) and Qg parameters is necessary.
