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Product Detailed Parameters
- Description：MOSFET N-CH 60V 310MA SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70-3 (SOT323)
- Package / Case：SC-70, SOT-323
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Overview
The onsemi 2N7002WT1G is a small signal N-channel enhancement mode MOSFET housed in an SC-70 (SOT-323) surface-mount package. It features a drain-to-source voltage rating of 60 V and a continuous drain current of 310 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance of 1.6 Ω at a gate drive of 10 V and 2.5 Ω at 4.5 V. Electrical characteristics include a gate threshold voltage range of 1.0 V to 2.5 V, a total gate charge of 0.7 nC, and input capacitance of 24.5 pF. Thermal performance specifies a steady-state power dissipation of 280 mW with a junction-to-ambient thermal resistance of 450 °C/W.
Feature Summary
- ESD protected design with a Gate-Source ESD rating of 2000 V under HBM Method 3015 conditions.
- Automotive qualification compliant with AEC-Q101 standards and PPAP capable for unique site requirements.
- Low RDS(on) optimized for efficient switching in low-side load applications.
- RoHS compliant construction that is Pb-Free and Halogen Free/BFR Free.
Applications
- Low side load switch
- Level shift circuits
- DC-DC converter
- Portable applications including DSC, PDA, and Cell Phone
Procurement Notes
Verify the specific ordering suffix 'T1G' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the '2V' prefix variant meets automotive site and control change requirements if AEC-Q101 qualification is necessary for the target application. Ensure component authenticity through authorized distribution channels.
Selection Notes
Select this component for compact PCB layouts requiring an N-channel MOSFET with a 60 V breakdown voltage. The SC-70 package suits space-constrained portable electronics. Verify that the 1.6 Ω on-resistance at 10 V gate drive aligns with the system's logic level or driver capability. Consider the 280 mW steady-state power dissipation limit when designing thermal management strategies.
Part Context
This part belongs to the 2N7002W series of small signal MOSFETs manufactured by onsemi. The series includes variants such as the 2N7002KT1G in SOT-23 packages and the 2V7002W series designed for automotive markets. The 2N7002WT1G specifically utilizes the SC-70 footprint to provide a balance of electrical performance and minimal board area consumption.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the Gate-Source ESD rating for the 2N7002WT1G?
The device has a Gate-Source ESD rating of 2000 V when tested using HBM Method 3015.
Is the 2N7002WT1G suitable for automotive applications?
Yes, the 2V7002W prefix variants within this family are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
