2N706A TIN/LEAD

$0.75

Description：15V 50MA 300MW TH TRANSISTOR-SMA
Series：-

SKU:4744675bed0c Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N706A TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 15V 50MA 300MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N706A TIN/LEAD

Description：15V 50MA 300MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：15 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：10µA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 10mA, 1V
Power - Max：300 mW
Frequency - Transition：200MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N706A TIN/LEAD

2N706A TIN/LEAD

Single Bipolar Transistors Overview

The 2N706A TIN/LEAD is a single NPN bipolar junction transistor (BJT) manufactured by Central Semiconductor. It utilizes a TO-18-3 metal can package for through-hole mounting. The device supports a maximum DC collector current of 50 mA and a collector-emitter voltage (VCEO) of 15 V. Key electrical parameters include an emitter-base voltage (VEBO) of 5 V, power dissipation of 300 mW, and a DC current gain (hFE) ranging from 20 to 60.

Single Bipolar Transistors Feature Summary

Fast switching capability suitable for small-signal applications
Robust metal can construction in a TO-18-3 package
Designed for general-purpose amplification and switching tasks

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Small-signal switching applications
Fast switching logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when sourcing this component. The TIN/LEAD designation indicates lead composition, which may differ from Pb-free variants such as the 2N706A PBFREE. Confirm RoHS compliance status and lead finish requirements with the manufacturer or authorized distributor prior to procurement to ensure compatibility with assembly processes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a hermetically sealed NPN transistor in a TO-18-3 package. Ensure the circuit operates within the 15 V collector-emitter limit and 50 mA current threshold. Consider the 300 mW power dissipation rating for thermal management. Verify that the tin/lead termination meets environmental regulations applicable to the final product deployment region.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor discrete transistor portfolio, specifically categorized under bipolar junction transistors. It serves as a legacy or specialized alternative to surface-mount devices, offering high reliability through its metal can construction. The 2N706A is distinct from MOSFET offerings like the 2N7002 series produced by the same manufacturer.