Single Bipolar Transistors 2N708 TIN/LEAD product image

2N708 TIN/LEAD

$2.93
  • Description:15V 50MA 360MW TH TRANSISTOR-SMA
  • Series:-

SKU:a5df6ff60dbc Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2N708 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 15V 50MA 360MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N708 TIN/LEAD

  • Description:15V 50MA 360MW TH TRANSISTOR-SMA
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):25µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 1V
  • Power - Max:-
  • Frequency - Transition:400MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N708 TIN/LEAD

2N708 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N708 TIN/LEAD is an NPN silicon switching transistor housed in a TO-18 metal can package. It features a collector-emitter voltage of 15V, a collector-base voltage of 40V, and an emitter-base voltage of 15V. The device supports a maximum collector current of 50mA with a total power dissipation of 360mW at 25°C ambient temperature. Operating junction temperatures range from -65°C to +200°C. The component utilizes through-hole wire terminals for bottom connection.

Single Bipolar Transistors Feature Summary

  • Constructed as a single-element NPN silicon bipolar junction transistor designed for switching applications.

Single Bipolar Transistors Applications

  • General-purpose small-signal switching circuits
  • Saturation switch configurations
  • Through-hole electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm lead composition, as variations exist between tin/lead and other plating options. Confirm availability status directly with authorized distributors, as supply levels fluctuate. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized NPN switching transistor with a hermetic metal can package is required. Consider the 15V collector-emitter rating and 50mA current limit against circuit demands. Evaluate the TO-18 form factor for compatibility with existing through-hole mounting infrastructure and mechanical constraints.

Single Bipolar Transistors Part Context

This part belongs to the standard NPN silicon transistor family, historically qualified under military specifications such as MIL-PRF-19500/312. It serves as a discrete semiconductor device within the broader category of small-signal bipolar transistors, providing reliable switching performance in industrial and commercial electronics.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the Microchip Technology 2N708 and STMicroelectronics 2N708 variants. Verify that replacement parts maintain identical pinout assignments and electrical ratings to ensure functional compatibility without circuit modification.

2N708 TIN/LEAD2N708 TIN/LEAD
$2.93
Buy Now