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Product Detailed Parameters
- Description：MOSFET N-CH 500V 12A TO254AA
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：415mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-254AA
- Package / Case：TO-254-3, TO-254AA (Straight Leads)
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Overview
The Microsemi Corporation 2N7228 is a hermetically sealed N-channel power MOSFET designed for high-reliability applications. It utilizes HEXFET technology to achieve low on-state resistance and high transconductance. The device features an electrically isolated package that eliminates the need for additional insulating materials between the component and heatsink, thereby improving thermal efficiency. Key electrical characteristics include a drain current of 12A and an on-resistance of 0.415 Ω. It supports surface mount installation and offers dynamic dv/dt ratings suitable for demanding environments.
Feature Summary
- Hermetically sealed construction ensuring environmental protection
- HEXFET technology providing low on-state resistance and high transconductance
- Electrically isolated package design for improved thermal efficiency
- Dynamic dv/dt rating capability for robust switching performance
Applications
- Switching power supplies
- Motor controls
- Inverters and choppers
- High energy pulse circuits
Procurement Notes
Verify the specific suffix (e.g., U for surface mount) against the required package type. Confirm MIL-PRF-19500 qualification status if military-grade reliability is mandated. Ensure the supplier provides valid traceability documentation for hermetic sealing integrity. Cross-reference datasheet revisions to confirm parameter consistency with existing designs.
Selection Notes
Select this component when high reliability and thermal isolation are critical. The 12A current rating suits moderate power switching tasks. Consider the surface mount option for space-constrained PCB layouts. Evaluate the 0.415 Ω on-resistance against system power loss requirements. Verify compatibility with drive voltage levels for optimal switching speed.
Part Context
This part belongs to the HEXFET family of power MOSFETs from Microsemi. It is often compared to through-hole equivalents like the JANTX2N7228. The surface mount variant simplifies assembly while maintaining the ruggedness expected in aerospace and industrial sectors. It serves as a bridge between standard commercial MOSFETs and specialized military-grade discrete semiconductors.
Replacement Considerations
Direct substitutes include the JANTX2N7228 for through-hole applications. Surface mount alternatives may require checking pinout compatibility. Verify that replacement devices meet the same hermetic sealing standards and MIL-PRF specifications.
