2N7335

Overview

The JANTX2N7335 is a high-reliability, hermetically sealed power field-effect transistor manufactured by Microsemi. It features a P-channel silicon metal-oxide semiconductor construction housed in a ceramic metal-sealed MO-036AB DIP package with 14 pins. The device integrates four separate elements, each equipped with a built-in diode, and operates in enhancement mode. Key electrical specifications include a maximum drain current of 0.75 A, a minimum drain-source breakdown voltage of 100 V, and a maximum on-resistance of 1.73 Ω. It possesses an avalanche energy rating of 75 mJ.

Feature Summary

• Hermetically sealed ceramic metal-sealed packaging for environmental protection
• High reliability qualification suitable for demanding operational environments
• Integrated four-element configuration with built-in diodes per element

Applications

• Military aerospace electronic systems requiring radiation and environmental hardness
• High-reliability power switching circuits
• Avionics control modules

Procurement Notes

Verify the specific ordering suffix to confirm the exact military qualification level (e.g., JANTX) and ensure the component matches the required hermetic seal standards. Confirm that the 14-pin ceramic DIP package aligns with the target PCB footprint and mounting constraints. Validate compliance with relevant defense specifications such as MIL-PRF-19500 series if applicable to the system requirements.

Selection Notes

Select this component when a ruggedized, hermetically sealed P-channel MOSFET is required for critical applications. The four-element configuration allows for complex switching topologies within a single package. Ensure the thermal management design accommodates the specified on-resistance and current limits. Verify that the 100V breakdown voltage meets the circuit's peak voltage requirements with adequate safety margins.

Part Context

This part belongs to the Microsemi (formerly Microchip) line of high-reliability discrete semiconductors designed for space and defense markets. The JANTX prefix indicates a specific tier of quality assurance and testing beyond standard commercial grades. These components are engineered to withstand harsh conditions, including vacuum, temperature extremes, and potential radiation exposure found in orbital or tactical environments.

Replacement Considerations

Direct replacements must match the 14-pin hermetic DIP form factor and P-channel MOSFET characteristics. Verify equivalent avalanche energy ratings and on-resistance values. Cross-reference with other JANTX-series FETs from Microsemi or qualified alternate manufacturers holding identical military certifications.