2N7368

Single Bipolar Transistors Overview

The 2N7368 is an NPN high-power silicon transistor designed for robust switching applications. It operates with a collector current of 10A and withstands a collector-emitter voltage of 80V. The device is housed in a TO-254AA metal package, ensuring efficient thermal dissipation for high-current scenarios. Qualified under MIL-PRF-19500/622 standards, it supports JAN, JANTX, and JANTXV reliability levels. Key electrical characteristics include a forward current transfer ratio defined at specific test conditions, making it suitable for demanding industrial environments requiring stable performance.

Single Bipolar Transistors Feature Summary

• High power handling capability with 10A collector current rating
• Robust construction using silicon technology for durability
• Metal package design facilitating effective heat management

Single Bipolar Transistors Applications

• High-power motor control systems
• Industrial switching circuits
• Military-grade electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific qualification level (JAN, JANTX, or JANTXV) required for your application, as these suffixes denote different reliability standards rather than functional changes. Ensure the ordering information matches the exact part number designation to confirm compliance with MIL-PRF-19500/622 specifications. Cross-reference manufacturer documentation to validate authenticity and technical consistency before integration into critical systems.

Single Bipolar Transistors Selection Notes

Select this component when high current capacity and reliable switching are primary requirements. The TO-254 package offers superior thermal performance compared to standard plastic packages. Consider the specific military qualification level needed based on environmental stress factors. Evaluate the 80V voltage rating against circuit peak voltages to ensure adequate safety margins during operation.

Single Bipolar Transistors Part Context

This transistor belongs to the JAN series of high-power devices, manufactured by Microchip Technology. It serves as a discrete bipolar component within larger power management architectures. The device is distinct from lower-power general-purpose transistors due to its specific current handling and ruggedized packaging designed for harsh operating conditions.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN configuration, 10A current rating, and TO-254 package. Verify that alternative parts meet the same MIL-PRF-19500/622 qualification levels if military grade is required. Functional equivalence depends on identical electrical parameters and thermal characteristics.